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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:97 Issue:11 Help

Mechanical stability of ultrathin Ge/Si film on SiO2: The effect of Si/SiO2 interface

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4 Author(s)
Huang, Minghuang ; Department of Materials Science and Engineering, University of Utah, Salt Lake City, Utah 84112 ; Nairn, John A. ; Liu, Feng ; Lagally, M.G.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1926421 

We perform two-dimensional linear elastic finite element analysis to investigate the mechanical stability of ultrathin Ge/Si film grown on or bonded to SiO2, using imperfect interface elements between Si and SiO2 to model Si/SiO2 interfacial slippage. We demonstrate that the overall composite film is stable when only the tangential slippage is allowed, however, it becomes unstable when normal slippage is allowed: the coherently strained Ge island induces a large local bending of Si layer, and separates the Si layer from the underlying SiO2 forming a void at the Si/SiO2 interface.

Published in:
Journal of Applied Physics  (Volume:97 ,  Issue: 11 )

Date of Publication: Jun 2005

Page(s):
116108 - 116108-3
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.1926421
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Jun 2005

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