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Characteristics of a micromachined floating-gate high-electron-mobility transistor at 4.2 K

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5 Author(s)
Teh, W.H. ; Cavendish Laboratory, University of Cambridge, Madingley Road, Cambridge CB3 0HE, United Kingdom ; Crook, R. ; Smith, C.G. ; Beere, H.E.
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We use micromachined, free-standing Ni cantilevers to develop a mechanical field-effect transistor based on III-V material systems. The device consists of an electrostatically actuated microcantilever, acting as the floating gate, fabricated over a defined two-dimensional electron gas (2DEG) in a modulation-doped GaAs/AlGaAs heterostructure. The gating effects on the conductance of the 2DEG channel of the biased floating gate at different operating points are studied at 4.2 K. Preliminary resonance measurements based on the 2DEG as a deflection sensor are presented.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 11 )

Date of Publication:

Jun 2005

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