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Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

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9 Author(s)
Dyakonova, N. ; Groupe d’Etude des Semiconducteurs (GES)-Unité Mixte de Recherche (UMR) 5650 Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2, 34900 Montpellier, France ; Teppe, F. ; Łusakowski, J. ; Knap, W.
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The influence of the magnetic field on the excitation of plasma waves in InGaAs/AlInAs lattice matched high electron mobility transistors is reported. The threshold source-drain voltage of the excitation of the terahertz emission shifts to higher values under a magnetic field increasing from 0 to 6 T. We show that the main change of the emission threshold in relatively low magnetic fields (smaller than approximately 4 T) is due to the magnetoresistance of the ungated parts of the channel. In higher magnetic fields, the effect of the magnetic field on the gated region of the device becomes important.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 11 )