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Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

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9 Author(s)
Dyakonova, N. ; Groupe d’Etude des Semiconducteurs (GES)-Unité Mixte de Recherche (UMR) 5650 Centre National de la Recherche Scientifique (CNRS)-Université Montpellier 2, 34900 Montpellier, France ; Teppe, F. ; Łusakowski, J. ; Knap, W.
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The influence of the magnetic field on the excitation of plasma waves in InGaAs/AlInAs lattice matched high electron mobility transistors is reported. The threshold source-drain voltage of the excitation of the terahertz emission shifts to higher values under a magnetic field increasing from 0 to 6 T. We show that the main change of the emission threshold in relatively low magnetic fields (smaller than approximately 4 T) is due to the magnetoresistance of the ungated parts of the channel. In higher magnetic fields, the effect of the magnetic field on the gated region of the device becomes important.

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Journal of Applied Physics  (Volume:97 ,  Issue: 11 )