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The quantum mobility of a two-dimensional electron gas in selectively doped GaAs/InGaAs quantum wells with embedded quantum dots

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5 Author(s)
Pagnossin, I.R. ; Instituto de Física da Universidade de São Paulo, Laboratório de Novos Materiais Semiconductores (LNMS) CP 66318, São Paulo 05315-970, São Paulo, Brazil ; da Silva, E.C.F. ; Quivy, A.A. ; Martini, S.
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In this work we studied the transport properties of a two-dimensional electron gas (2DEG) in a series of GaAs/InGaAs delta-modulation-doped quantum wells, in which an InAs layer was located in the vicinity of the electron channel. We observed that, even after illumination, all samples exhibited a total free-electron concentration slightly lower than the one measured in a reference sample (without the InAs layer), an effect that was attributed to the transfer of carriers from the 2DEG to the surface states. Our data also provided evidence that strain fields in and around the quantum dots act as additional scattering sources for the 2DEG.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 11 )