By Topic

Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
2 Author(s)
Ryvkin, B.S. ; Department of Electronics, University of York, Heslington, York YO10 5DD, United Kingdom and A. F. Ioffe Physico–Technical Institute, Polytechnicheskaya 26, Saint Petersburg 194021, Russia ; Avrutin, E.A.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1929087 

An analytical treatment for carrier distribution in optical confinement layers (OCLs) of semiconductor lasers with bimolecular recombination is developed. On the basis of this approach, the effect of OCL recombination on the internal quantum efficiency of a laser is evaluated. It is shown that this effect can lead to a rapid deterioration in efficiency with increased waveguide thickness at high enough currents, and also contributes to the efficiency decrease with current in a given structure. An asymmetric, narrow waveguide structure is shown to avoid this problem while still providing a good-quality beam.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 11 )