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Fabrication and characterization of Co–Mn–Al Heusler-type thin film

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7 Author(s)
Kubota, H. ; Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST), Umezono 1-1-1, Tsukuba 305-8568, Japan ; Nakata, J. ; Oogane, M. ; Ando, Y.
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Co–Mn–Al thin films were prepared using ultrahigh-vacuum magnetron sputtering on thermally oxidized silicon substrates at various substrate temperatures. Composition, crystal structure, magnetic property, and surface roughness of the films were investigated. The film prepared at a substrate temperature (Ts) of around 300 °C had Co2MnAl B2 structure, revealing partial disorder between Mn and Al sites. Magnetization exhibited a maximum and coercive field exhibited a minimum around Ts=300 °C. Surface roughness increased with the substrate temperature. The film prepared at a substrate temperature of 300 °C was applied to a bottom electrode of a magnetic tunnel junction, thereby creating a large tunnel magnetoresistance.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 10 )