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Tunneling anisotropic magnetoresistance: Creating a spin-valve-like signal using a single ferromagnetic semiconductor layer

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9 Author(s)
Ruster, C. ; Physikalisches Institut (EP3), Universität Würzburg, Am Hubland, D-97074 Würzburg, Germany ; Gould, C. ; Jungwirth, T. ; Girgis, E.
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This article reports on a spintronics device based on the ferromagnetic semiconductor (Ga,Mn)As. Our transport measurements on a Au/AlOx/(Ga,Mn)As tunnel junction yield the surprising result that it is possible to get a spin-valve-like signal using only one magnetic layer. The strong spin-orbit coupling in (Ga,Mn)As creates significant anisotropies in the density of states with respect to the magnetization orientation. This, together with a two-step magnetization reversal creates a bistable magnetoresistive device with properties unattainable in current metal based spin-valves.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 10 )