Cart (Loading....) | Create Account
Close category search window
 

Effects of ion energy on the crystal size and hydrogen bonding in plasma-deposited nanocrystalline silicon thin films

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Lebib, S. ; Laboratoires de Physique des Interfaces et des Couches Minces [Unite Mixte de Recherche (UMR) 7647-Centre National de la Recherche Scientifique (CNRS)] Ecole Polytechnique, 91128, Palaiseau Cedex, France ; Roca i Cabarrocas, P.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1913803 

We present a detailed study of the effects of the substrate temperature, radio-frequency (rf) power, and total pressure on the crystal size and hydrogen bonding in nanocrystalline silicon thin films codeposited on the grounded and rf electrodes of an asymmetric radio frequency glow discharge reactor. Raman spectroscopy, x-ray diffraction, and spectroscopic ellipsometry measurements show that by varying the deposition parameters we can obtain crystal sizes in the range of 3–10 nm and crystalline fractions in the range of 20% up to 97%. The obtaining of small crystallite sizes (4–5 nm) in films submitted to high-energy (100–300 eV) ion bombardment is highlighted by infrared-absorption and hydrogen evolution measurements, which display characteristic features of hydrogen bonded at the surface of the crystallites. Therefore, hydrogen bonding is a unique way to demonstrate the presence of small crystallites in films at the transition between amorphous and nanocrystalline, films which look amorphous when characterized by standard techniques such as Raman spectroscopy and x-ray diffraction.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 10 )

Date of Publication:

May 2005

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.