By Topic

Electronic structures of wide-band-gap (SiC)1-x(AlN)x quaternary semiconductors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Tang, Y.-H. ; Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan ; Tsai, M.-H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1897074 

Due to small lattice mismatch and large-band-gap difference between SiC and AlN, the light-emitting devices fabricated from (SiC)1-x(AlN)x quaternary semiconductors may be tuned over a wide wavelength range. To understand the feasibility of this application, first-principles calculations have been done to study their electronic structures. It is found that there is a transition of the band gap from indirect to direct when x is greater than about 0.20. The band gap is also found to bow down as a function of x. The calculated results suggest that the direct band gap of (SiC)1-x(AlN)x can be tuned over a wide range from 2.97 to 6.28 eV. Thus, (SiC)1-x(AlN)x is potentially useful for optoelectronic applications.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 10 )