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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:97 Issue:10 Help

Electronic structures of wide-band-gap (SiC)1-x(AlN)x quaternary semiconductors

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2 Author(s)
Tang, Y.-H. ; Department of Physics, National Sun Yat-Sen University, Kaohsiung, 804 Taiwan ; Tsai, M.-H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1897074 

Due to small lattice mismatch and large-band-gap difference between SiC and AlN, the light-emitting devices fabricated from (SiC)1-x(AlN)x quaternary semiconductors may be tuned over a wide wavelength range. To understand the feasibility of this application, first-principles calculations have been done to study their electronic structures. It is found that there is a transition of the band gap from indirect to direct when x is greater than about 0.20. The band gap is also found to bow down as a function of x. The calculated results suggest that the direct band gap of (SiC)1-x(AlN)x can be tuned over a wide range from 2.97 to 6.28 eV. Thus, (SiC)1-x(AlN)x is potentially useful for optoelectronic applications.

Published in:
Journal of Applied Physics  (Volume:97 ,  Issue: 10 )

Date of Publication: May 2005

Page(s):
103702 - 103702-5
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.1897074
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
May 2005

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