By Topic

Carrier compensation in semiconductors with buried metallic nanoparticles

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Driscoll, D.C. ; Materials Department, University of California, Santa Barbara, California 93106-5050 ; Hanson, M.P. ; Gossard, A.C.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1808473 

We have grown composite epitaxial materials consisting of layers of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix. Although the addition of ErAs particles into the InGaAs matrix increases the free-electron concentration, compensation of these free electrons is possible by depleting electrons from the metal particles through Be acceptor doping of the semiconductor. The room-temperature electron concentration of an ErAs:InGaAs superlattice sample with 0.05 monolayer ErAs per layer can be reduced by ≫104 by delta-doping the ErAs layers with 7×1012 cm-2 of Be. The highest resistivity measured for a Be-doped ErAs:InGaAs superlattice was 350 Ω cm.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 1 )