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Carrier compensation in semiconductors with buried metallic nanoparticles

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3 Author(s)
Driscoll, D.C. ; Materials Department, University of California, Santa Barbara, California 93106-5050 ; Hanson, M.P. ; Gossard, A.C.

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We have grown composite epitaxial materials consisting of layers of semimetallic ErAs nanoparticles embedded in a semiconducting In0.53Ga0.47As matrix. Although the addition of ErAs particles into the InGaAs matrix increases the free-electron concentration, compensation of these free electrons is possible by depleting electrons from the metal particles through Be acceptor doping of the semiconductor. The room-temperature electron concentration of an ErAs:InGaAs superlattice sample with 0.05 monolayer ErAs per layer can be reduced by ≫104 by delta-doping the ErAs layers with 7×1012 cm-2 of Be. The highest resistivity measured for a Be-doped ErAs:InGaAs superlattice was 350 Ω cm.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 1 )