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Concentration dependent interdiffusion in InGaAs/GaAs as evidenced by high resolution x-ray diffraction and photoluminescence spectroscopy

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4 Author(s)
Bollet, F. ; Department of Physics, Queen Mary, University of London, Mile End Road, London, E1 4NS, United Kingdom ; Gillin, W.P. ; Hopkinson, M. ; Gwilliam, R.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1825613 

A high resolution x-ray diffraction (HRXRD) and photoluminescence study of a 10 nm InGaAs/GaAs quantum well structure repeatedly diffused under thermally accurate and timed annealing conditions demonstrates that the Fickian model with a constant coefficient of diffusion is inadequate and that the distribution of compositions of the diffused well cannot be fitted with error functions. A simple model, with the well retaining its square shape and homogeneity while dissolving the barriers when annealed, is successful in modelling both the HRXRD and photoluminescence data.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 1 )

Date of Publication:

Jan 2005

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