The electron-beam induced current (EBIC) method was employed to investigate the electrical activity of dislocations in silicon-carbide-diffused p-n diodes. It was observed that EBIC contrast depends on the type of defect (superscrew, screw, and edge dislocation). This dependence was attributed to spatial inhomogeneities in the electrical properties of the material around the dislocations due to different impurity-dislocation interactions during high-temperature (∼1900 °C) diffusion. Chemical etching of the sample was used to define the nature of the defects observed by EBIC imaging. It was found that electrical breakdown of the diodes occurs at the location of superscrew dislocations.