Cart (Loading....) | Create Account
Close category search window

Influence of the AlGaN buffer layer on the biaxial strain of GaN epilayers grown on 6H-SiC (0001) by molecular-beam epitaxy

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Jeganathan, K. ; Power Electronics Research Center, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba, Ibaraki 305-8568, Japan ; Shimizu, M. ; Okumura, H.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The role of AlxGa1-xN buffers in the control of residual strain in GaN epitaxial layers grown on 6H-SiC (0001) substrates by molecular-beam epitaxy was investigated. The initial GaN layer on the AlxGa1-xN (x=0%–10%) buffer nucleates in two-dimensional form, which promotes a step-flow growth mode in subsequently grown GaN layers. As the Al content in the AlxGa1-xN (x∼20%) buffer was increased, GaN began to nucleate as incoherent polygonal islands, coalescing as the thickness increased to 15 nm. The overall residual strain induced in GaN is tensile xx) for GaN grown directly on SiC and compressive (-εxx) for GaN grown using an AlGaN buffer. The stiffness coefficient (-2C13/C33) of GaN on the AlxGa1-xN (x∼10%) buffer was estimated to be -0.53 assuming that the defect-induced hydrostatic stress of unstrained GaN (c0/a0) was constant.

Published in:

Journal of Applied Physics  (Volume:97 ,  Issue: 1 )

Date of Publication:

Jan 2005

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.