The growth of InAsxSb1-x/GaAs (x≤0.06) heterostructures has been achieved using liquid phase epitaxy. High resolution x-ray diffraction studies reveal that the films are single crystalline and structurally coherent with the substrate. It is also inferred from these measurements that the in-plane and out-of-plane strain arising out of mismatched epitaxy is almost completely relaxed, leading to a high dislocation density. The room temperature energy gap is measured to be 0.13 eV for InAs0.06Sb0.94/GaAs. Temperature dependence of the energy gap is studied between 93 and 433 K through the absorption spectra. Temperature dependent Hall and mobility measurements carried out between 10 and 370 K on these samples are discussed.