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Raman scattering and photoluminescence studies of Er-implanted and Er+O coimplanted GaN

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8 Author(s)
Song, S.F. ; State Key Laboratory for Surface Physics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China ; Chen, W.D. ; Zhang, Chunguang ; Bian, Liufang
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Raman measurements and photoluminescence (PL) were performed on the metal-organic chemical-vapor deposition epitaxially grown GaN before and after the implantation with Er and Er+O. Several Raman defect modes have emerged from the implantation-damaged samples. The structures around 300 and 595 cm-1 modes are attributed to the disorder-activated Raman scattering, whereas the 670 cm-1 peak is assigned to nitrogen-vacancy-related defect scattering. One additional peak at 360 cm-1 arises after Er+O coimplantation. This Raman peak is attributed to the O-implantation-induced defect complex. The appearance of the 360 cm-1 mode results in the decrease of the Er3+ -related infrared PL intensity for the GaN:Er+O samples.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 9 )

Date of Publication:

Nov 2004

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