Cart (Loading....) | Create Account
Close category search window
 

Raman scattering and photoluminescence studies of Er-implanted and Er+O coimplanted GaN

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

8 Author(s)
Song, S.F. ; State Key Laboratory for Surface Physics, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, Beijing 100083, China ; Chen, W.D. ; Zhang, Chunguang ; Bian, Liufang
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1792387 

Raman measurements and photoluminescence (PL) were performed on the metal-organic chemical-vapor deposition epitaxially grown GaN before and after the implantation with Er and Er+O. Several Raman defect modes have emerged from the implantation-damaged samples. The structures around 300 and 595 cm-1 modes are attributed to the disorder-activated Raman scattering, whereas the 670 cm-1 peak is assigned to nitrogen-vacancy-related defect scattering. One additional peak at 360 cm-1 arises after Er+O coimplantation. This Raman peak is attributed to the O-implantation-induced defect complex. The appearance of the 360 cm-1 mode results in the decrease of the Er3+ -related infrared PL intensity for the GaN:Er+O samples.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 9 )

Date of Publication:

Nov 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.