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Comment on “Low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films” [J. Appl. Phys. 86, 4491 (1999)]

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2 Author(s)
Yu, Lisheng ; Department of Physics, Peking University, Beijing 100871. People’s Republic of China ; Qiao, D.

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A very low barrier height (∼0.055 V) at the p-GaN side in energy band diagram of p-NiO/p-GaN interface was obtained in the paper: “low-resistance ohmic contacts to p-type GaN achieved by the oxidation of Ni/Au films.” They contributed the low contact resistance to the low energy barrier height for holes. We indicate the mistake of their calculation and obtain a barrier height of 2.28 V and a notch of 0.19 V on the p-GaN side and the p-NiO side, respectively, in this comment.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 8 )

Date of Publication:

Oct 2004

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