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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:96 Issue:8 Help

Two-bands charge transport in silicon nitride due to phonon-assisted trap ionization

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6 Author(s)
Nasyrov, K.A. ; Institute of Automation and Electrometry, 630090, Novosibirsk, Russia ; Gritsenko, V.A. ; Novikov, Yu.N. ; Lee, E.-H.
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The charge transport in the amorphous Si3N4 is studied experimentally and theoretically. We have found, that widely accepted Frenkel model of the trap ionization gives the unphysical low value of the attempt to escape factor, and the enormously high value of the electron tunnel mass. Experimental data are well described by theory of the two-bands conduction and the phonon-assisted trap ionization in Si3N4.

Published in:
Journal of Applied Physics  (Volume:96 ,  Issue: 8 )

Date of Publication: Oct 2004

Page(s):
4293 - 4296
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.1790059
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 2004

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