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Anomalous magnetoresistance in NiMnGa thin films

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6 Author(s)
Golub, Vladimir O. ; Advanced Materials Research Institute, University of New Orleans, New Orleans, Louisiana 70148 ; Vovk, Andriy Ya. ; Malkinski, L. ; OConnor, Charles J.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1771474 

The origin of anomalous negative magnetoresistance and its temperature dependence in polycrystalline NiMnGa films prepared by pulse laser deposition was studied. The investigation of structural, transports, magnetic, and ferromagnetic resonance properties of the films suggests contributions of different mechanisms in magnetotransport. At low magnetic fields the main contribution to magnetoresistance is due to the transport between the areas with different orientation of magnetic moments, while at high fields it is an electron scattering of in spin-disordered areas.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 7 )

Date of Publication:

Oct 2004

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