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Influence of layer structure on the current-voltage characteristics of Si/SiGe interband tunneling diodes

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7 Author(s)
Khorenko, E. ; Solid-State Electronics Department, University Duisburg-Essen, D-47048 Duisburg, Germany ; Prost, W. ; Tegude, F.J. ; Stoffel, M.
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We systematically investigated the DC-characteristics of Si/SiGe interband tunneling diodes as a function of layer structure and device geometry. The Si spacer thicknesses XP and XN between the intrinsic SiGe layer and the p- and n-δ-doped layers were varied. We obtained a peak current density of 16 kA/cm2 and a peak-to-valley current ratio of 2.7 (with a device area of 45 μm2) for a structure with XP=0 nm and XN=1 nm. A good homogeneity of all measured diode parameters was achieved over the wafer area.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 7 )

Date of Publication:

Oct 2004

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