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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:96 Issue:7 Help

1/f noise in GaN/AlGaN heterostructure field-effect transistors in high magnetic fields at 300 K

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11 Author(s)
Rumyantsev, S.L. ; Department of Electrical, Computer, and Systems Engineering and Center for Broadband Data Transfer Science and Technology, CII 9017, Rensselaer Polytechnic Institute, Troy, New York ; Shur, M.S. ; Dyakonova, N. ; Knap, W.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1787911 

1/f noise in AlGaN/GaN metal-oxide-semiconductor heterostructure field-effect transistors has been measured at 300 K in strong magnetic fields up to 10 T. The devices exhibited strong geometric magnetoresistance. The magnetic-field dependence of the 1/f noise shows that fluctuations of the number of electrons is the dominant mechanism of the 1/f noise.

Published in:
Journal of Applied Physics  (Volume:96 ,  Issue: 7 )

Date of Publication: Oct 2004

Page(s):
3845 - 3847
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.1787911
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 2004

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