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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:96 Issue:7 Help

Homoepitaxial diamond growth for the control of surface conductive carrier transport properties

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2 Author(s)
Williams, Oliver A ; Department of Electronic and Electrical Engineering, University College London, Torrington Place, London WC1E 7JE, United Kingdom ; Jackman, Richard B

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1789275 

Growth of high quality diamond for surface conductive device applications is demonstrated. Mobility values higher than 140 cm2 V-1 s-1 at sheet carrier concentrations of 2.5×1012 cm-2 were achieved using a high growth rate process. Furthermore, control over the carrier transport statistics is demonstrated on both single crystal and polycrystalline diamond. This process allows the production of high quality electronic grade diamond with ability to tune carrier transport statistics. The mechanism behind this process is discussed.

Published in:
Journal of Applied Physics  (Volume:96 ,  Issue: 7 )

Date of Publication: Oct 2004

Page(s):
3742 - 3747
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.1789275
Product Type:
Journals & Magazines
Date of Current Version :
18 June 2009
Issue Date :
Oct 2004

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