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Fluorine-enhanced boron diffusion induced by fluorine postimplantation in silicon

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1 Author(s)
Noda, Taiji ; ULSI Process Technology Development Center, Semiconductor Company, Matsushita Electric Industrial Company Limited, 19 Nishikujyo-kasugacho, Minami-ku, Kyoto, 601-8413, Japan

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In this article, the postimplanted fluorine effect on boron transient-enhanced diffusion (TED) and dose loss during a 750°C annealing is shown. 19F implants at 2 keV, after 11B implant at an energy of 1 keV,3×1014/cm2, have been investigated in the dose range between 1×1013/cm2 and 6×1014/cm2 without a preamorphizing implant. Below a F-implant dose of 1×1014/cm2, the reduction or non-enhancement of boron-TED effect is observed. In the case of a F-implant dose of 6×1014/cm2, the enhanced boron TED (∼2.6×) in crystalline Si and the increased dose loss(∼2×) than that of a normal boron TED is shown, and this anomalous diffusivity enhancement persists for 120 min at 750°C. The B+F 6×1014/cm2 consecutive implant damage is smaller than that of the BF2 5 keV implant. In the case of the B+F 6×1014/cm2, a high content of fluorine is retained around the end-of-range (EOR) damage region within 120 min. These results indicate - that the fluorine retained around the EOR region may affect the enhanced boron TED in crystalline Si at 750°C. Boron-diffusion model, which describes both the native interstitial fluorine and the boron-fluorine chemical effect, explains that the suppression of boron TED with a low F-implant dose is due to the reduction of the interstitial supersaturation.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 7 )