Skip to Main Content
Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1778478
We study the relationship between the density of states and joint density of states functions in amorphous semiconductors. Introducing an elementary empirical model for the density of states functions that captures the basic expected features, we determine analytical and asymptotic joint density of states results, relating the parameters characterizing the underlying density of states functions with the resultant joint density of states. Numerical joint density of states results, corresponding to the specific case of hydrogenated amorphous silicon, are also presented. It is suggested that this density of states and joint density of states analysis will prove of use to the experimentalist.