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Probing intrinsic transport properties of single metal nanowires: Direct-write contact formation using a focused ion beam

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4 Author(s)
Marzi, G.De ; Nanotechnology Group, NMRC, Lee Maltings, Prospect Row, Cork, Ireland ; Iacopino, D. ; Quinn, A.J. ; Redmond, G.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1779972 

The transport characteristics of 70-nm-diameter platinum nanowires (NWs), fabricated using a pore-templated electrodeposition process and individually contacted using a focused ion beam (FIB) method, are reported. This approach yields nanowire devices with low contact resistances (∼400 Ω) and linear current–voltage characteristics for current densities up to 65 kA/cm2. The intrinsic nanowire resistivity (33±5 μΩ cm) indicates significant contributions from surface- and grain-boundary scattering mechanisms. Fits to the temperature dependence of the intrinsic NW resistance confirm that grain-boundary scattering dominates surface scattering (by more than a factor of 2) at all temperatures. Our results demonstrate that FIB presents a rapid and flexible method for the formation of low-resistance ohmic contacts to individual metal nanowires, allowing intrinsic nanowire transport properties to be probed.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 6 )

Date of Publication:

Sep 2004

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