By Topic

In situ transmission electron microscopy analysis of electron beam induced crystallization of amorphous marks in phase-change materials

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Kaiser, M. ; Philips Research Laboratories, Prof. Holstlaan 4, 5656 AA Eindhoven, The Netherlands ; van Pieterson, L. ; Verheijen, M.A.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

Crystallization of amorphous data marks in crystalline Ga15Sb85 and Ge,In doped SbTe phase-change material was studied in situ in a Transmission Electron Microscope (TEM). Electron irradiation induced crystallization was obtained at room temperature using a 120 kV beam. In general, electron beam (e--beam) induced crystallization started from the amorphous-crystalline interface and was growth dominated for both materials. A dependence of growth velocity on electron beam intensity and crystal direction was observed. A comparison with laser-crystallized amorphous marks was made. For laser-induced crystallization also crystal growth from the amorphous-crystalline interface was seen. However, differences in morphology between the e--beam and laser-recrystallized data marks of the GaSb phase-change material were observed. The electron beam erased data marks contained crystals with (extremely) large periodicities found in three dimensions. For the Ge,In doped SbTe phase-change material identical morphologies were observed for the e--beam and laser-recrystallized data marks. Both methods that induce crystallization displayed a rhombohedral Sb structure, the same structure as the laser-crystallized surroundings.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 6 )