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The energy-fine structure of GaInNAs/GaAs multiple quantum wells grown at different temperatures and postgrown annealed

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7 Author(s)
Kudrawiec, R. ; Institute of Physics, Wrocław University of Technology, Wybrzez˙e Wyspiańskiego 27, 50-370 Wrocław, Poland ; Pavelescu, E.-M. ; Andrzejewski, J. ; Misiewicz, J.
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We report photoreflectance investigations of the energy-fine structure of GaInNAs/GaAs multiple quantum wells (MQWs) grown at different temperatures and postgrown treated by rapid thermal annealing (RTA). A “splitting” of the ground and excited QW transitious due to the presence of different nitrogen nearest-neighbor environments, i.e., N-Ga4-mInm(0≤m≤4) short-range-order clusters, has been observed. The RTA induces a nitrogen redistribution between the five possible N-Ga4-mInm configurations and thus leads to a blueshift of QW transitions. The magnitude of the blueshift and its dependence on the growth temperature and annealing temperature are investigated in this paper.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 5 )

Date of Publication:

Sep 2004

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