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Threshold voltage change due to organic-inorganic interface in pentacene thin-film transistors

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4 Author(s)
Lee, Jiyoul ; Institute of Physics and Applied Physics, Yonsei University, Seoul 120-749, Korea ; Kim, J.H. ; Seongil Im ; Jung, Duk-Young

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1767617 

We have constructed pentacene-based organic thin-film transistors (OTFTs) using 270 nm thick Al2O3+x gate dielectric deposited on indium tin oxide glass. Two different deposition techniques have been employed for the solid pentacene channel of our OTFTs: traditional thermal evaporation (TE) and energetic cluster evaporation (ECE). The TE-deposited pentacene channel appeared superior to the ECE-deposited pentacene in regard to crystallinity and hole mobility. However, the ECE-prepared OTFT showed an earlier turn on with smaller threshold voltage than the TE-prepared OTFT. This threshold voltage shift appeared more prominent with proper chemical treatment on the surface of our Al2O3+x gate oxide.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 4 )

Date of Publication:

Aug 2004

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