By Topic

Dipole scattering in highly polar semiconductor alloys

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Zhao, Wei ; Department of Electrical Engineering, University of Notre Dame, Notre Dame, Indiana 46556 ; Jena, Debdeep

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The wide gap polar semiconductors III-V nitrides, II-VI oxides, and ferroelectrics exhibit large spontaneous and piezoelectric polarization due to their nonsymmetric crystal structures. Electrical conductivity in alloys of such crystals is degraded by scattering from the varying polarization coupled to alloy disorder. We have modeled this effect by dipole scattering. We have calculated dipole scattering limited mobility in the relaxation time approximation of the Boltzmann equation. The results are applied to AlxGa1-xN layers coherently strained on GaN. For a typical carrier concentration of 1018 (cm-3) in Al0.3Ga0.7N, dipole scattering limited mobilities are 2535 and 3420 (cm2/V s) at 300 and 77 K, respectively. Applying our results to ferroelectric alloys, we reach the interesting conclusion that dipole scattering in such alloys will lead to extremely low mobilities (1–10 cm2/V s), since it degrades as the square of average dipole moment. This leads us to suggest that digital alloy growth might be necessary to achieve high conductivities in highly polar wide gap alloy semiconductors and ferroelectrics for device applications.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 4 )