Cart (Loading....) | Create Account
Close category search window

Interfacial properties of strained piezoelectric InGaAs/GaAs quantum wells grown by metalorganic vapor phase epitaxy on (111)A GaAs

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)

Your organization might have access to this article on the publisher's site. To check, click on this link: 

In this work we employed photoreflectance spectroscopy over the temperature range 11-300 K to investigate the heterointerfaces of a strained piezoelectric InGaAs/GaAs single quantum well structure grown on a (111)A GaAs substrate by metalorganic vapor phase epitaxy. Photoreflectance spectroscopy measurements in combination with a theoretical analysis using the quantum well structural parameters obtained by high-resolution x-ray diffractometry enabled us to evaluate separately the abruptness and roughness of the quantum well interfaces. The excellent agreement between the experimental and calculated transition energies for a quantum well structure with a well width of 41 Å and 13% In demonstrates that the heterointerfaces are abrupt. From a theoretical analysis of the temperature dependence of the photoreflectance broadening parameters, based on the Bose-Einstein phonon-coupling model, we determined the longitudinal optical phonon energy and the electron-phonon coupling strength. This analysis shows an interface roughness of less than ±1 monolayer. These results in conjunction with the observation of a narrow photoluminescence linewidth of 9.1 meV indicate the achievement of essentially atomically smooth interfaces in a highly strained (∼1%) piezoelectric InGaAs/GaAs quantum well structure.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 4 )

Date of Publication:

Aug 2004

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.