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Anomalous switching in submicrometer magnetic tunnel junction arrays arising from magnetic vortex and domain wall pinning

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5 Author(s)
Park, Wanjun ; Materials and Devices Laboratory, Samsung Advanced Institute of Technology, Gyeonggi-Do, 449-712, Korea ; Hwang, I.J. ; Taewan Kim ; Lee, K.J.
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We present switching characteristics of patterned submicrometer magnetic tunnel junction arrays containing NiFe and CoFe free layers. The resemblance of magnetization and magnetoresistance (MR) curves was studied by micromagnetic calculations and experimental measurements. Upon analyzing the MR transfer curves, the magnetic vortex and domain wall pinning effects on anomalous switching of each magnetic tunnel junction can be distinguished by remanent states. Data indicates that the low saturation magnetization of the free layer increases domain wall pinning and decreases trapped magnetization vortices.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 3 )