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Ultralow-threshold cryogenic vertical-cavity surface-emitting laser with AlAs oxideGaAs distributed Bragg reflectors

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10 Author(s)
Haisler, V.A. ; Institute of Semiconductor Physics, Lavrenteva 13, 630090 Novosibirsk, Russia ; Toropov, A.I. ; Bakarov, A.K. ; Bajutova, O.R.
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Data are presented on vertical-cavity surface-emitting lasers designed for cryogenic operation. Low-loss cavity design and high quality factor of the cavity provide the superior lasing characteristics at T=80 K. Ultralow lasing threshold current of 15 μA with external differential quantum efficiency 26% is achieved for a 5 μm aperture device, and a 31% efficiency is achieved for a 8 μm aperture device with a 30 μA threshold and 47 A/cm2 threshold current density.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 3 )