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Browse Journals & Magazines > Journal of Applied Physics ...> Volume:96 Issue:2 Help

Equilibrium crystal shape of GaAs in nanoscale patterned growth

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2 Author(s)
Lee, S.C. ; Center for High Technology Materials and Department of Electrical and Computer Engineering, University of New Mexico, 1313 Goddard, SE, Albuquerque, New Mexico 87106 ; Brueck, S.R.J.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1757657 

The equilibrium crystal shape (ECS) of GaAs homoepitaxially grown on a nanoscale SiO2-patterned (001) plane by molecular beam epitaxy is investigated. A GaAs epilayer selectively grown on a nanoscale area bounded by a circular SiO2 mask undergoes faceting, resulting in a pyramidal shape with {110} sidewalls. Growth is slowed or terminated with the generation of these {110} facets even with a continuing supply of Ga atoms. This implies that the pyramidal shape is energetically very stable. Based on experimental results and the Wulff construction, a {110}-type sidewall pyramid is proposed as an ECS of GaAs on (001) in nanoscale patterned growth. © 2004 American Institute of Physics.

Published in:
Journal of Applied Physics  (Volume:96 ,  Issue: 2 )

Date of Publication: Jul 2004

Page(s):
1214 - 1218
ISSN :
0021-8979
Digital Object Identifier :
10.1063/1.1757657
Date of Current Version :
18 June 2009
Issue Date :
Jul 2004

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