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Excitation density dependence of photocurrent efficiency in low mobility semiconductors

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2 Author(s)
Tessler, Nir ; Microelectronic and Nanoelectronic Center, Electrical Engineering Department, Technion Israel Institute of Technology, Haifa 32000, Israel ; Rappaport, Noam

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We report numerical simulation of the charge transport in low mobility semiconductors under optical excitation. We choose the low mobility regime as it is typical of organic polymer semiconductor devices. We find that, contrary to common belief, the limiting factor for the photocurrent at high optical excitation density is the onset of space-charge limit and that bimolecular recombination is merely a result of the limited current. We also show that the power dependence of the photocurrent efficiency can be used to deduce which charge-carrier is the slow one and extract its mobility. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 2 )

Date of Publication:

Jul 2004

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