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Low dark current and blue enhanced a-Si:H/a-SiC:H heterojunction n-i-δi-p photodiode for imaging applications

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5 Author(s)
Servati, Peyman ; Electrical and Computer Engineering department, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada ; Vygranenko, Yuri ; Nathan, A. ; Morrison, Scott
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This paper presents an a-Si:H/a-SiC:H heterojunction n-i-δi-p photodiode with low dark current and enhanced short wavelength responsivity suitable for low-level light detection applications. Junction properties and carrier transport are investigated in terms of current-voltage characteristics, photocurrent transient measurements, and spectral photoresponse. It is demonstrated that introduction of a thin (∼40 Å) undoped a-SiC:H buffer i) at the p-i interface significantly reduces the reverse dark current and recombination losses at this interface. A dark current density of ∼10 pA/cm2 at reverse bias of 1 V is achieved for the n-i-δi-p structure, in which the p-type a-SiC:H window layer and the undoped δi buffer layer have a band gap of 2 eV.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 12 )