By Topic

Low dark current and blue enhanced a-Si:H/a-SiC:H heterojunction n-i-δi-p photodiode for imaging applications

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
5 Author(s)
Servati, Peyman ; Electrical and Computer Engineering department, University of Waterloo, Waterloo, Ontario N2L 3G1, Canada ; Vygranenko, Yuri ; Nathan, A. ; Morrison, Scott
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

This paper presents an a-Si:H/a-SiC:H heterojunction n-i-δi-p photodiode with low dark current and enhanced short wavelength responsivity suitable for low-level light detection applications. Junction properties and carrier transport are investigated in terms of current-voltage characteristics, photocurrent transient measurements, and spectral photoresponse. It is demonstrated that introduction of a thin (∼40 Å) undoped a-SiC:H buffer i) at the p-i interface significantly reduces the reverse dark current and recombination losses at this interface. A dark current density of ∼10 pA/cm2 at reverse bias of 1 V is achieved for the n-i-δi-p structure, in which the p-type a-SiC:H window layer and the undoped δi buffer layer have a band gap of 2 eV.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 12 )