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Controlled growth of O-polar ZnO epitaxial film by oxygen radical preconditioning of sapphire substrate

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9 Author(s)
Mei, Z.X. ; Beijing National Laboratory of Electron Microscopy for Condensed Matter Physics, Institute of Physics, Chinese Academy of Sciences, Beijing 100080, China ; Wang, Y. ; Du, X.L. ; Ying, M.J.
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Oxygen radicals pregrowth treatment and surface nitridation were used to eliminate Zn-polar inversion domains and control the growth of single-domain O-polar ZnO film on sapphire (0001) substrate by rf plasma-assisted molecular beam epitaxy. We found that the formation of oxygen-terminated sapphire surface prior to nitridation is crucial for achieving the anion polarity in subsequent AlN and ZnO layers, as demonstrated by formation of the 3×3 surface reconstruction during ZnO growth and ex situ polarity determination. This method, in general, can be applied to growth of other polar films, such as II-VI oxides and III-V nitrides, on sapphire (0001) substrates.©

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 12 )