By Topic

Optimization of AlGaN/GaN current aperture vertical electron transistor (CAVET) fabricated by photoelectrochemical wet etching

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

The purchase and pricing options are temporarily unavailable. Please try again later.
4 Author(s)
Gao, Y. ; Materials Department and Electrical & Computer Engineering Department, University of California, Santa Barbara, California 93106 ; Ben-Yaacov, I. ; Mishra, U.K. ; Hu, E.L.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1806281 

AlGaN/GaN current aperture vertical electron transistor (CAVET) was fabricated and optimized for band gap selective photoelectrochemical wet etching. The large polarization induced voltage offset (around 2.5–4 eV) observed in the first generation CAVET was reduced to 0.7 V in this structure by employing a δ Si doping layer buried 60 Å below the In0.03Ga0.97N (60 nm thick) and bottom GaN interface to screen the polarization fields. Other sample structures were studied to achieve an aperture with both good undercut etching and a small voltage offset. It was clearly demonstrated that etch selectivity in the GaN/InGaN/GaN undercut structures was influenced by hole confinement and the chemical activity of the N-face GaN.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 11 )