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Telegraph noise, which originates from the switching of charge between metastable trapping sites, becomes increasingly important as device sizes approach the nanoscale. For charge-based quantum computing, this noise may lead to decoherence and loss of readout fidelity. Here we use a radio frequency single electron transistor (rf-SET) to probe the telegraph noise present in a typical semiconductor-based quantum computer architecture. We frequently observe microsecond telegraph noise, which is a strong function of the local electrostatic potential defined by surface gate biases. We present a method for studying telegraph noise using the rf-SET and show results for a charge trap in which the capture and emission of a single electron is controlled by the bias applied to a surface gate.