By Topic

Accelerated waveform methods for parallel transient simulation of semiconductor devices

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
A. Lumsdaine ; Lab. for Sci. Comput., Notre Dame Univ., IN, USA ; M. W. Reichelt ; J. M. Squyres ; J. K. White

Simulating transients in semiconductor devices involves numerically solving the time-dependent drift-diffusion equations, usually in two or three space dimensions. Because of the computation cost of these simulations, methods that perform careful domain decomposition so as to exploit parallel processing have received much recent attention. In this paper, we describe using accelerated waveform relaxation (WR) to perform parallel device transient simulation using both clusters of workstations and the IBM SP-2. The accelerated WR algorithms are compared to pointwise direct and iterative methods, and it is shown that the accelerated WR method is competitive on a single processor. In addition, it is shown that with a domain decomposition chosen for rapid iterative method convergence rather than parallel efficiency, the pointwise methods parallelize poorly but the WR method achieves near linear speedup (with respect to the number of processors) on the IBM SP-2

Published in:

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems  (Volume:15 ,  Issue: 7 )