Cart (Loading....) | Create Account
Close category search window
 

Effects of postdeposition annealing on the dielectric properties of antiferroelectric lanthanum-doped lead zirconate stannate titanate thin films derived from pulsed laser deposition

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Yao, Yingbang ; Department of Physics and Materials Science, City University of Hong Kong, Kowloon, Hong Kong ; Lu, S.G. ; Chen, Haydn ; Wong, K.H.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1804226 

Lanthanum-doped lead zirconate stannate titanate antiferroelectric thin films were deposited onto Pt-buffered silicon substrates using the pulsed laser deposition method. The deposition temperature was 570 °C. The postdeposition annealing process was carried out in an oxygen-flow tube furnace at temperatures ranging from 650 to 800 °C for a duration of 30 min; its effects were studied through the variations of the microstructure as well as the electrical and dielectric properties. It was found that an appropriate annealing process at temperatures above 700 °Ccould substantially improve the dielectric properties. However, annealing beyond 800 °C caused the film properties to deteriorate severely. Explanations were given with regard to the microstructure-property relationship.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 10 )

Date of Publication:

Nov 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.