By Topic

Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

10 Author(s)
Guzenko, V.A. ; Institute of Thin Films and Interfaces (ISG1) and CNI - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich GmbH, 52425 Jülich, Germany ; Thillosen, N. ; Dahmen, A. ; Calarco, R.
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link: 

We report on magnetic and structural properties of n- and p-type GaN layers implanted with Mn, Cr, and V. The samples were subsequently annealed in a N2 atmosphere at a constant temperature in the range between 700 and 1050 °C. Measurements of the magnetization as a function of magnetic field as well as of the temperature show typical paramagnetic behavior. In addition, a weak antiferromagnetic coupling between the implanted ions was observed. 3d-metal rich precipitates of crystalline nature are revealed by high resolution transmission electron microscopy.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 10 )