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Magnetic and structural properties of GaN thin layers implanted with Mn, Cr, or V ions

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10 Author(s)
Guzenko, V.A. ; Institute of Thin Films and Interfaces (ISG1) and CNI - Center of Nanoelectronic Systems for Information Technology, Research Centre Jülich GmbH, 52425 Jülich, Germany ; Thillosen, N. ; Dahmen, A. ; Calarco, R.
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We report on magnetic and structural properties of n- and p-type GaN layers implanted with Mn, Cr, and V. The samples were subsequently annealed in a N2 atmosphere at a constant temperature in the range between 700 and 1050 °C. Measurements of the magnetization as a function of magnetic field as well as of the temperature show typical paramagnetic behavior. In addition, a weak antiferromagnetic coupling between the implanted ions was observed. 3d-metal rich precipitates of crystalline nature are revealed by high resolution transmission electron microscopy.

Published in:

Journal of Applied Physics  (Volume:96 ,  Issue: 10 )