By Topic

Reduction of iron diffusion in silicon during the epitaxial growth of β-FeSi2 films by use of thin template buffer layers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

12 Author(s)
Liu, Zhengxin ; System Engineers’ Company, Limited, Yamato, Kanagawa 242-0001, Japan ; Suzuki, Yasuhito ; Osamura, Masato ; Ootsuka, Teruhisa
more authors

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1682683 

We fabricated continuous highly (110)/(101)-oriented β-FeSi2 films on Si (111) substrates by the facing-target sputtering method. An epitaxial thin β-FeSi2 template buffer layer preformed on the silicon substrate was found to be essential in the epitaxial growth of thick β-FeSi2 films. It was proved that the template reduced the iron diffusion into the silicon substrate during thick β-FeSi2 film fabrication. Even though the annealing was performed at high temperature (880 °C) for a long duration (10 h), iron diffusion was effectively hindered by the template. By introducing this template buffer layer, an abrupt interface without appreciable defects between the β-FeSi2 film and the silicon substrate formed. The mechanism for the reduction of iron diffusion by the template buffer layer is discussed. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:95 ,  Issue: 8 )