Cart (Loading....) | Create Account
Close category search window

Field emission and photofluorescent characteristics of zinc oxide nanowires synthesized by a metal catalyzed vapor-liquid-solid process

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Li, Seu Yi ; Institute of Materials Science and Engineering, National Chiao Tung University, Hsinchu, Taiwan, 30049, Republic of China ; Pang Lin ; Lee, Chia Ying ; Tseng, Tseung Yuen

Your organization might have access to this article on the publisher's site. To check, click on this link: 

The ZnO nanowires synthesized by vapor-liquid-solid growth mechanism with Cu and Au as the catalyst were investigated. The principal differences in morphology between Cu and Au catalyzed ZnO nanowires are observed and lead to significant differences in their field emission and photofluorescent characteristics. The Cu catalyzed ZnO nanowires with a high-quality wurtzite structure were grown vertically on p-type Si(100) substrate along [0002] direction. A strong ultraviolet emission at 381 nm is observed. These ZnO nanowires show excellent field emission properties with turn-on field of 0.83 V/μm and corresponding current density of 25 μA/cm2. The emitted current density of the ZnO nanowires is 1.52 mA/cm2 at a bias field of 8.5 V/μm. The large field emission area factor, β arising from the morphology of the nanowire field emitter, is partly responsible for the good emission characteristics. The ZnO nanowires with high emission current density and low turn-on field are expected to be used in field emission flat panel display. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:95 ,  Issue: 7 )

Date of Publication:

Apr 2004

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.