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Melting and crystallization behavior of low-pressure chemical-vapor-deposition amorphous Si films during excimer-laser annealing

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3 Author(s)
Voogt, F.C. ; Laboratory of Electronic Components, Technology and Materials (ECTM), Delft Institute of Microelectronics and Submicron Technology (DIMES), Delft University of Technology, P.O. Box 5053, 2600 GB Delft, The Netherlands ; Ishihara, R. ; Tichelaar, F.D.

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Results are presented of cross-sectional transmission-electron microscopy and time-resolved optical reflectivity investigations into the excimer-laser annealing of low-pressure chemical-vapor-deposition amorphous Si films. It is found that, in the initial stages of the laser pulse, a thin surface layer melts. This is directly followed by explosive crystallization of the film into to small, columnar, and defect-rich grains. As more laser energy is consumed, the Si film melts in from the surface for a second time, eventually leading to complete melting of the film. It is argued that melting along grain boundaries and defects is a crucial step in obtaining large, single-crystalline grains in the super-lateral growth regime. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:95 ,  Issue: 5 )

Date of Publication:

Mar 2004

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