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High-resolution transmission electron microscopy of as-deposited boron nitride on the edge of ultrathin Si flake

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3 Author(s)
Yang, Hangsheng ; Department of Materials Engineering, School of Engineering, The University of Tokyo, Hongo 7-3-1, Bunkyo-ku, Tokyo 113-8656, Japan ; Iwamoto, Chihiro ; Yoshida, Toyonobu

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1644897 

Boron nitride was deposited on the edge of ultrathin Si flake substrates by low-pressure inductively coupled plasma-enhanced chemical vapor deposition. Since the as-deposited boron nitride was sufficiently thin for cross-sectional high-resolution transmission electron microscopy, the postdeposition thinning process was omitted. The morphology of the boron nitride was revealed to vary from an amorphous structure to a three-layer structure, that is, amorphous/turbostratic/cubic boron nitride, upon increasing the thickness of the edge of Si flake substrates from a few to 50 nm. The critical thickness of the edge of Si flakes required for the nucleation of cubic boron nitride was found and estimated to be approximately 40 nm. The surface of cubic boron nitride nuclei was composed of {111} nanofacets, and no evidence of a thin sp2-bonded BN structure was observed at the top surface. This clearly reveals that cubic boron nitride is nucleated and grows on the top surface, not in the subsurface of the turbostratic boron nitride layer, during chemical vapor deposition. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:95 ,  Issue: 5 )

Date of Publication:

Mar 2004

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