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Pulsed laser annealing of Sn-implanted Si single crystal

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6 Author(s)
Klinger, D. ; Institute of Physics, Polish Academy of Sciences, Al. Lotników 32/46, PL-02 668 Warsaw, Poland ; Auleytner, J. ; Z ymierska, D. ; Kozankiewicz, B.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1643781 

A very disturbed near-surface layer was formed by Sn-ion implantation in a Si single crystal. For crystal lattice reconstruction of this layer and for change of the dopant distribution pulsed laser annealing was applied. In order to determine the optimal value of the energy density of laser pulse numerical calculations were performed. The experiments carried out by means of reflection high-energy electron diffraction and by Rutherford backscattering have shown that laser annealing caused the formation of the epitaxial Si1-xSnx layer. A good crystal quality of this layer, comparable with the quality of the single crystal Si matrix, as well as a good substitutional location of the Sn dopant atoms were obtained for the laser beam energy density value equal to the calculated optimal one. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:95 ,  Issue: 5 )

Date of Publication:

Mar 2004

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