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An extended multi-component model for the change of threshold current of semiconductor lasers as a function of time under the influence of defect annealing

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3 Author(s)
Lam, S.K.K. ; Department of Engineering Physics, McMaster University, Hamilton, Ontario L8S 4L7, Canada ; Mallard, R.E. ; Cassidy, Daniel T.

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We model the change of threshold current of a semiconductor laser diode as a function of time under the influence of defect annealing. Our approach describes an analytical multi-component model (MCM) based on a logistic equation which accounts for finite resources of fuel for the growth of nonradiative recombination defect complexes. We attribute the observable effect of the annealing on the threshold current to a reduction of the internal loss in the laser, αi, as opposed to a reduction in the number of nonradiative recombination centers. In this study, we use the extended MCM to examine the intricate state when degradation and annealing co-exist in a semiconductor laser. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:95 ,  Issue: 5 )