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Fabrication of low loss two-dimensional InP photonic crystals by inductively coupled plasma etching

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10 Author(s)
Pommereau, F. ; OPTO+, Alcatel Research & Innovation, Route de Nozay, F-91460 Marcoussis, France ; Legouezigou, L. ; Hubert, S. ; Sainson, S.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1644630 

Low-loss bidimensional photonic crystals have been fabricated by using an optimized process, consisting of electron beam lithography of a poly(methyl methacrylate) resist, reactive ion etching of an intermediate dielectric layer, and inductively coupled plasma etching of InP-based heterostructures. A depth to diameter aspect ratio as high as 14 has been obtained for hole diameter varying from 260 to 620 nm. As a result of the high aspect ratio and of the almost cylindrical hole shape, very low radiation losses have been obtained. For example, a transmission coefficient in the air band as high as 0.8 has been achieved for eight rows ΓM structure, demonstrating a very low value of the radiation losses. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:95 ,  Issue: 5 )

Date of Publication:

Mar 2004

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