Cart (Loading....) | Create Account
Close category search window
 

High electric-field effects on short-channel polythiophene polymer field-effect transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Xu, Yifan ; Department of Electrical Engineering, The Ohio State University, Columbus, Ohio 43210 ; Berger, Paul R.

Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.1636830 

The field-effect mobility (FEM) in polythiophene (PT) polymer field-effect transistors (PFETs) increases with reduced channel lengths during high driving forces across the source and drain, which is contradictory to the decrease in mobility caused by short-channel effects in amorphous Si thin-film transistors. The longitudinal electric-field (across source and drain) dependence of the FE mobility is believed to create the rise in mobility once the longitudinal electric field exceeds a critical value of 105V/cm. The high longitudinal electric field also modulates the influence of the gate bias upon the FEM in PT PFETs. With increased longitudinal electric field, the correlation between FEM and gate bias is largely enhanced. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:95 ,  Issue: 3 )

Date of Publication:

Feb 2004

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.