By Topic

Monte Carlo study of hot-carrier transport in bulk wurtzite GaN and modeling of a near-terahertz impact avalanche transit time diode

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

2 Author(s)
Reklaitis, A. ; Semiconductor Physics Institute, A. Goshtauto 11, 2600 Vilnius, Lithuania ; Reggiani, L.

Your organization might have access to this article on the publisher's site. To check, click on this link: 

By Monte Carlo simulations we calculate static and dynamic charge transport properties of bulk wurtzite GaN in the presence of high electric fields. The microscopic model is validated by comparison with available experiments. On this basis a double-drift impact avalanche transit time diode made of wurtzite GaN is investigated and optimized by performing ensemble Monte Carlo simulations of the diode self-consistently coupled with a load circuit. The large-signal ac characteristics show that avalanche diodes based on GaN can operate as microwave generators in a wide frequency range up to 0.7 THz. A maximum efficiency of about 18% is found at 0.45 THz. © 2004 American Institute of Physics.

Published in:

Journal of Applied Physics  (Volume:95 ,  Issue: 12 )