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In this paper, we present an electromagnetic analysis of ring-cavity-assisted amplified spontaneous emission in Er3 +-doped SiO2 (Er:SiO2 ). A horizontal slot geometry, consisting of a low-index Er:SiO2 layer embedded between high-index a-Si layers, allows for a planar ring-cavity design which maintains high optical confinement in the active Er:SiO2 material. The simulations are performed within the auxiliary differential equation-finite-difference time-domain (ADE-FDTD) scheme which couples the quantum mechanical light emission and amplification behavior of the Er:SiO2 with the electromagnetic device behavior. We present the enhanced spontaneous emission in waveguide-coupled ring cavities with varying coupling gaps. We provide an analysis of the relationship between cavity quality factor, coupling coefficient, and enhanced spontaneous emission.